Abstract
In a wireless communication, a signal power amplifi er is needed to carry signals over a long distance. Many signal amplifiers are made of tube as the amplifyin g component and as such they suffer low efficiency. This study presents results of the research on designing and implementing solid state 144MHz signal amplifier employing MOSFET BLF278 as the active component of the amplifier. The amplifier has an automatic activation switch, an input terminal, a 50 ohm impe dance output terminal and a bypass system for two way communication. This amplifier has been tested on fr equencies between 144.00 MHz to 146.90 MHz in 100 KHz steps without adjusting the tuning. It is found that the signal amplifier delivers RF powers up to 500 watt at the working voltage of 48 volt with the eff iciency of 77%. The amplifier has a Standing Wave Ratio (SWR) of 1:1 when amplifying and 1.1:1.0 when in bypass mode. The signal amplifier has been tested successfully for radio communication between Sukoharjo in Central Jawa and Surabaya in East Jawa.
Highlights
Power amplifier and insight into the operation of VHFUHF power amplifier was analyzed in (Raab, 1977)
This study presents results of the research on designing and implementing solid state 144MHz signal amplifier employing MOSFET BLF278 as the active component of the amplifier
A signal amplifier is required in order to deliver signal over a long distance availability of Field Effect Transistor (FET) device has inspired researchers to overcome the limitation of the (Cripps, 2006; Harjoko and Supardi, 2009)
Summary
Power amplifier and insight into the operation of VHFUHF power amplifier was analyzed in (Raab, 1977). A signal amplifier is required in order to deliver signal over a long distance availability of Field Effect Transistor (FET) device has inspired researchers to overcome the limitation of the (Cripps, 2006; Harjoko and Supardi, 2009) One such electron tube and transistor based signal amplifier and to amplifier is a Radio Frequency (RF) amplifier which design and fabricate more efficient FET-based power amplifies the power of a signal carrier. Power amplifiers for wireless communication technologies have been developed, such as for CDMA application such amplifiers suffer from a low efficiency compared to solid state amplifiers (Cripps, 2002; 2006) Such (Hanington et al, 1999), for WCDMA application (Joshin et al, 2003), for EDGE-GSM application amplifiers require a high voltage to operate and need tuning in their operations. The amplifier is designed to deliver up to 500 watt power due to the long distance communication requirement
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