Abstract
Acidic electroless Cu deposition on a substrate in solution is examined. In this study, SiN insulator layers in the substrate and the reaction agent, , are employed to reduce the corrosive influence of ions on the substrate. During the plating, a Si wafer is used as a reducing agent and is oxidized by ions. The ions accept the electrons released via the oxidation of Si and then deposit as Cu metal on the TiN barrier. The plating solution enables the activation of the TiN surface for direct electroless Cu deposition, due to its corrosion on the oxygen-rich layer of the barrier. The increased plating time and the concentration elevate the nucleation rate of Cu on TiN, resulting in the finer Cu grains and better surface coverage of Cu films. Plating at higher bath temperatures causes the agglomeration of Cu clusters by providing more thermal energy for growth but not for nucleation. X-ray diffraction analysis indicates no in the Cu films deposited on TiN. Also, the adhesion of is improved as shown by the tape-peel test.
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