Abstract
Developing high-energy storage materials is essential for the miniaturization and integration of electronic components. Traditional dielectric ceramics have drawbacks such as low energy storage and complex composition. One of the most effective methods to enhance the energy storage characteristics of dielectrics is to increase their breakdown field strength. In this study, lead-free (1-x)NaNbO3-xBi(Ni0.5Zr0.5)O3 [(1-x)NN-xBNZ] ceramics with high recoverable energy storage density (Wrec) were fabricated by secondary solid-state sintering method. The BNZ was integrated into the NN as a secondary component to restrict the growth of grain and enhance the breakdown field strength. Ultimately, an excellent Wrec of 4.90 J/cm3 and an ultrahigh breakdown field strength (Eb) of 500 kV/cm were obtained for the 0.88NN-0.12BNZ ceramic, which is related to the non-equivalent substitution of the B site. In addition, the sample remained notably stable at the test temperatures ranging from 20 °C to 120 °C and frequencies ranging from 10 Hz to 100 Hz. Excellent charge-discharge performances with high power density (PD = 41.2 MW/cm3) and a large current density (CD = 588.9 A/cm2), as well as an ultrafast discharge speed (60 ns) were obtained. All the aforementioned properties are potential conditions for high performance energy storage electronic ceramics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.