Abstract
Irradiation damage is one of the main drawbacks restricting the application of Silicon Photomultiplier (SiPM), especially in high irradiance environments such as space, colliders, and nuclear power plants. In-situ current annealing is a method of using the self-current heating of SiPM, and because it does not require disassembly of the SiPM and additional heating devices, it exhibits potential for dealing with radiation damage. We investigate the in-situ annealing performance of three types of SiPM for irradiation damage. The annealing current and time are optimized and the SiPM performance before and after annealing is compared. It was found that after annealing the dark currents of the three types of SiPMs decreased significantly by 1–2 orders of magnitude. Finally, the variation of SiPM performance with temperature is investigated. The energy resolution does not recover as well as the dark current.
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