Abstract
LaNbON2 has narrow bandgap and wide visible-light absorption band, yet no photocatalytic water oxidation on LaNbON2 has been reported. By a post-annealing treatment in Ar, anion vacancies were brought into LaNbON2 as shown by EPR spectroscopy. These could act as donors in the semiconductor. And consequently the oxidative power of holes was enhanced as indicated by the difference between fermi level and valence band maximum (EF-EVBM) evaluated from valence band XPS. The annealed LaNbON2 photocatalyst acquired water oxidation ability for the first time, which was improved by combining CoOx as cocatalyst. Annealed LaNbON2 derived from La3NbO7 had smaller particle size, higher concentration of anion vacancies, bigger EF-EVBM and better performance for photocatalytic oxygen evolution reaction than LaNbON2 derived from LaNbO4.
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