Abstract
The effects of chamber pressure ( ${P}_{\text {C}}$ ) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. Smoother and denser IGTO films were obtained with decreasing ${P}_{\text {C}}$ , which were explained based on the enhanced kinetic energy of sputtered particles due to fewer collisions with the plasma atmosphere. The resulting IGTO thin-film transistor exhibited a high mobility of 35.0 cm2/Vs, subthreshold gate swing of 0.17 V/decade, threshold voltage ( ${V}_{\text {TH}}$ ) of −0.45 V, and ${I}_{\mathrm {\scriptscriptstyle {ON/OFF}}}$ ratio >108, even at a low annealing temperature of 150 °C.
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