Abstract
Manipulating the critical switching field between antiferroelectric (AFE) state and ferroelectric (FE) is an important concept for tuning the energy storage performance of AFEs. As one of the lead-based AFE systems, Pb(Lu1/2Nb1/2)O3 promises high potential in the miniaturization of pulsed power capacitors, but the extremely high critical switching field and low induced saturated polarization demonstrate severe drawbacks with respect to temperature stability and flexibility. Here, A-site Ba2+ doping engineering is used to effectively reduce the critical switching field and improve the saturated polarization in BaxPb1-x(Lu1/2Nb1/2)O3 (0.01 ≤ x ≤ 0.08, abbreviated as xBa-PLN) ceramics. We found the AFE-FE phase transition can be occurred at 80ºC with a high energy storage density of 4.03 J/cm3 for Ba0.06Pb0.94(Lu1/2Nb1/2)O3 ceramic. Our results show that Ba2+ additions destroy the antiparallel structure of AFE phase, and finally reduce the critical switching field, demonstrating a potential alternative to modulate the energy storage performance of AFEs.
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