Achieving epitaxy and intense luminescence in Ge∕Rb-implanted α-quartz

Abstract

The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of α-quartz, we studied double Ge∕Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic α-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1×1014–1×1016ions∕cm2 and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 1015 implanted Geions∕cm2, large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy.