Abstract
Sensing properties of various high-k sensing membrane, such as SnO2, HfO2, ZrO2, and Ta2O5, in dual gate extended-gate field-effect transistor (EGFET) were investigated. By adapting the dual-gate structure, high sensitivity exceeding the conventional Nernstian limit on sensitivity (59.15 mV/pH at 25 °C) was realized due to capacitive coupling effect. As a results, it was confirmed that dual-gate EGFET with Ta2O5 sensing membrane which has high permittivity shows the highest sensitivity of 478.0 mV/pH as well as excellent hysteresis voltage and drift rate characteristics.
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