Abstract
ABSTRACTLattice polarities and film qualities of GaN grown by rf-MBE were investigated concentrating on the use of different buffer layer processes at the initial stage. Direct clarifying by coaxial impact collision ion scattering spectra technique, together with RHEED and chemical wet etching, were applied to identify the lattice polarity of GaN films. XRD rocking curve and photoluminescence results showed that the qualities of GaN films with Ga-polarity were dramatic improved compared to those with N-polarity. Hall effect measurement results indicated that the mobility of the Ga-face film was increased to one order higher (568 cm2/Vs in maximum at room temperature) than that of N-face one.
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