Abstract
Impacts of structural transformations of top and bottom interface of metal/GeO2/Ge structure on electrical properties were investigated. The GeO2/Ge interface that was formed by low temperature oxidation achieved negligible hysteresis because of suppressing GeO volatilization. On the other hand, the metal/GeO2 interface with post metal deposition annealing attained disappearance of VFB shift. XPS and TDS measurements show that GeOx at the interface of the as-deposited metal/GeO2 vanished after annealing. It suggests that the improvement of the VFB shift was achieved by volatilization of GeOx including defects at the metal/GeO2 interface.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
