Accurately Modeling Zero-Bias Diode-Based RF Power Harvesters With Wide Adaptability to Frequency and Power

Abstract

This paper proposes an analytical method for effectively evaluating the performances of zero-bias diode-based RF power harvesters. The method allows the accurate calculation of both the diode power conversion efficiency (PCE) and matching efficiency, while showing the wide adaptability to frequency and input power. To calculate the diode PCE accurately, the junction voltage is built based on modeling the diode junction capacitance and turn-on voltage. Using the accurate diode PCE, the equivalent nonlinear resistance of the diode is calculated, and thus the diode impedance is obtained. This helps to design a matching network with required bandwidths and evaluate the corresponding matching efficiency. The total PCE of the RF power harvester is finally obtained by multiplying the diode PCE and matching efficiency. For verification, dual-band RF power harvesters based on diodes of SMS7630 and HSMS-2850 are developed to cover the two 5G frequency bands for three telecom operators in China (2.515-2.675, 3.4-3.5 & 3.5-3.6 GHz). They are designed to operate in the low power range of −25-−5 dBm for low power harvesting scenarios. Compared with the simulated results, the calculation discrepancy of less than 3.12% can be achieved in evaluating the total PCEs of the RF power harvesters. Prototypes of the designed RF power harvesters were fabricated and measured for validation. It shows that the proposed analytical method can provide design guidelines for developing a multi-band RF power harvester.