Abstract
This paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSSTM, was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band.
Highlights
Schottky diodes play an important role in several functions, such as rectification [1,2], mixing [3,4], and detection in all the range of microwave frequencies, up to the W-band and beyond [4]
Antimony (Sb) heterostructure backward diodes offer better noise performance with easier matching to 50 Ohm [5] compared to GaAs Schottky diodes, but may not always be accessible or available as discrete components [6]
Zero-bias Schottky diodes from ACST
Summary
Schottky diodes play an important role in several functions, such as rectification [1,2], mixing [3,4], and detection in all the range of microwave frequencies, up to the W-band and beyond [4]. In [16], modeling techniques are presented to extract a Schottky diode model analytically using additional fabricated structures (such as short and open circuits) for the de-embedding of parasitic capacitances and other effects. It is not Electronics 2019, 8, 696; doi:10.3390/electronics8060696 www.mdpi.com/journal/electronics. Anode devices were in [17] In this different diode-mounting techniques attach them tocarefully the final circuit assembly: wire bonding and ZBD. 3, in the modified model oriented attachment obtained in sense, 2, the modeling of ZBDs identify forflip-chip wire the bonding assembling is presented.
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