Abstract
control devices as a 4 terminal, 3-port active network. The purpose of this work is to present a new model in the general case of the MOSFET structure including substrate control effects by suitable approximation of the MOSFET terminal admittances. Device admittances are calculated in terms of the ’Uniform RC double transmission line’. The combined gate-substrate excitation mode can be treated in terms of an RC transmission line having a single, non-uniform capacitance distribution and a uniform resistance similar to the case of negligible substrate effects. The separate gate and substrate excitation modes, however, require for their representation an RC transmission line analog having two nonuniform capacitance distributions. We have the admittance parameters as:
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