Abstract
An accurate RF method using a linear regression of high-frequency Z-parameter equations at zero gate voltage is developed to extract resistances and inductances of sub-0.1 µm MOSFETs. Good agreement between the measured and modelled S-parameters is observed up to 30 GHz, verifying the accuracy of the RF method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
