Abstract
In this paper, we present a computing model of the current-voltage (I-V) characteristics of a gallium arsenide Schottky barrier field effect transistor called GaAs MESFET. This physical model is based on the two-dimensional analysis of the Poisson equation in the active region under the gate. In this frame, we elaborated a simulation software based on analysis of expressions that we have previously set up (1-3), the obtained theoretical results are discussed and compared to the experimental ones.
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