Abstract
Abstract We present a detailed study on accurate modeling of highly aluminum-doped p+ silicon. We have analyzed the influence of defect recombination and the effect of incomplete ionization on the saturation current densities of Al-p+ regions featuring different Al doping profiles. Very good agreement within a broad range of experimental data has been obtained. We demonstrate that incomplete ionization has a significant impact on the doping profile characteristics and, therefore, has to be accounted for in accurate modeling of highly aluminum-doped silicon.
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