Abstract
An accurate nonlinear circuit model for metal-insulator-semiconductor (MIS) interconnects is presented based on a device level simulation. The device level simulation gives detailed information regarding field-carrier interactions, semiconductor substrate loss and nonlinearity, as well as slow-wave effect, external bias effect and screening effect of the charged carriers. This model consists of an equivalent transmission line that mimics the energy transport characteristics of the actual MIS interconnect, and provides a generalized nonlinear and electronic tunable circuit model suitable for both small-signal and large-signal analyses.
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