Abstract
AbstractA method of analytical transmission electron microscopy is described that has been successfully applied to study dopant segregation to inversion domain boundaries in zinc oxide, to quantify the thicknesses of sub‐nanometre thin epitaxial layers grown by molecular beam epitaxy of indium arsenide (InAs) on gallium arsenide (GaAs) or silicon/germanium on silicon and proved the absence of any gettering of As or Ga dopants at Sigma=3 {111} grain boundaries in silicon, with a precision of <1 atom/nm2 in each case. Here, the case study of InAs/GaAs is reviewed in detail and the procedure for quantification of full hyperspectral data sets is explained. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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