Accurate HEMT model extraction and validation in class A and B bias points using a full two-port large signal on-wafer measurement system

Abstract

Full two-port large signal on-wafer waveform measurement systems, based on the HP Microwave Transition Analyzer (MTA), have recently been developed. These systems can allow for both small-signal S-parameters measurements in the frequency domain and large-signal waveforms measurements in the time domain. This capability makes them an ideal tool to generate and verify non-linear transistor models. Model extraction, from small-signal S-parameters measurements, and model verification, under DC, small-signal and large-signal measurements, are performed for the first time with such a system. A complete validation of a nonquasi-static look-up table based model generated with a waveform measurement system is presented. Different bias conditions have been analyzed with the emphases in this work being on the more difficult to model class B bias points. In all cases good agreement has been achieved.