Abstract
We present a full band structure calculation of temperature- and wavelength-dependent two-photon absorption (TPA) coefficients and free carrier absorption (FCA) cross sections in InAs, InSb, and Hg1−xCdxTe alloys. The wavelength dependence of the TPA coefficients agrees well with a widely used analytical expression. However, the magnitudes of the TPA coefficients obtained here are smaller by a factor of 1.2–2.5 than the analytical values. In addition, the TPA coefficient is found to depend sensitively on the photoexcited carrier density in small gap materials. The FCA is found to arise predominantly from hole absorption. The FCA cross section is found to be independent of the carrier density, but is strongly dependent on the temperature. The calculated TPA, FCA coefficients, and lifetimes are fitted to closed-form expressions and are used in solving the rate equations to obtain the transmitted pump and probe intensities as functions of incident intensity and sample thickness. The calculated pump transmission and time-dependent probe transmission in InAs agree very well with the measured values.
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