Abstract
The gate delay of ring oscillators in high V/sub T/ CMOSFET technology is characterized with respect to various channel widths (0.72 /spl mu/m-10 /spl mu/m). An expression for gate delay including the channel-width independent capacitance components is derived and compared with experimental results. Substantial increase of gate delay in the narrow channel width region is found due to channel width independent capacitance components which are inherent to transistors. Although the channel width independent capacitance is negligible in wide channel width, gate delay of narrow channel width (/spl les/1 /spl mu/m) ring oscillator increased more than 20% compared with 5 /spl mu/m channel width ring oscillator.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.