Accurate Determination of the Low-Light-Level Absorption of DUV-Fused Silica at 193 nm with Laser Calorimetry

Abstract

The low-light-level absorption coefficient of OH-contained and H2-impregnated synthetic fused silica material in 193 nm optical lithography application is determined via a laser calorimetry measurement. The fluence and repetition rate dependences of the absorptances of the deep ultraviolet (DUV)-fused silica samples with different thickness are measured. The measured dependences are fitted to a theoretical model, taking into consideration the generation and annealing of laser irradiation induced defects. The surface absorption, the low-light-level linear absorption coefficient, as well as the nonlinear absorption coefficient of the fused silica material are accurately determined via the fitting. The low-light-level linear absorption coefficients determined via the fluence dependence and the repetition rate dependence are in good agreement, demonstrating the reliability of the measured low-light-level absorption coefficient, which is the key parameter to the determination of the internal transmission of the DUV-fused silica material used in the 193 nm optical lithography.