Abstract
This study concerns the accurate and automatic extraction of the flat band voltage ( V fb) from CV measurements in MOS structures. By comparison to Quantum CV simulator, it focalizes on the experimental conditions needed for an accurate determination of V fb with various analytical methods. First, we demonstrate that an accurate determination of substrate doping level is crucial. Second, the so called Maserjian’s method appears to be more reliable when the maximum measurable capacitance is reduced; it is also less sensitive to variations of the depletion bias used for extraction of substrate doping level. Third, with non-constant substrate doping profile, significant source of error can be induced by uncertainty on the effective doping level at flat band conditions. A simple rule between doping gradient and surface doping level is proposed to ensure reliable extraction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
