Abstract
A novel method of accurately determining the doping profile under the gate region of an enhancement mode MOSFET using d.c. measurements has been proposed. This method computes point-to-point impurity concentration in the gate region by utilising the I ds -V gs data of the MOSFET operating in its linear region at varying substrate bias.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have