Abstract
The incorporation rates of Sb 2 and As 2 species are measured by group-V induced oscillations of reflection high-energy electron diffraction in molecular beam epitaxy. These measurements allow the accurate control and reproducibility of group-V composition in the AlGaAsSb system. Using the calibrations of Sb 2 incorporation rate we have grown GaAsSb, AlAsSb, AlGaAsSb layers and AlGaAsSb/AlAsSb distributed Bragg reflectors lattice matched on InP substrates. Very intense room-temperature photoluminescence signals of these mirrors demonstrate the good optical quality obtained with this simple method.
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