Accurate comparison on acceleration ability of electrons in SiO 2 with ZnS based on ZnS:Er phosphor

Abstract

In layered optimization scheme and solid state cathodoluminescence, silicon oxidation plays a very important role in terms of hot electrons of obtaining high energy. The acceleration ability of electrons in SiO 2 and ZnS were compared through the variation of emission intensity based on ZnS:Er phosphor during the reverse of polarity of sinusoidal voltage. The ratio of maximum emission intensity under positive and negative half period is 2.18. This result may be also demonstrated an important phenomenon: electrons were accelerated to a high energy by using secondary properties (acceleration of electrons) in SiO 2 or ZnS.