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Abstract
AbstractAn accurate charge‐control approach to analytical noise modeling of a high electron mobility transistor, which provides excellent results in agreement with the experimental data, is presented. The small‐signal parameters, and the drain and gate‐noise sources are calculated to determine the noise coefficients, minimum noise figure Fmin and minimum noise temperature Tmin. The influence of drain current, frequency, and device parameters upon Fmin and Tmin for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is presented. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 489–494, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20346
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