Accurate Analytical Switching-On Loss Model of SiC MOSFET Considering Dynamic Transfer Characteristic and Q gd

Abstract

Silicon carbide (SiC) devices enable more compact and efficient design of applications such as traction inverters and rectifiers. With miniaturization of power electronics, the volume and weight of heatsink or cold plate occupies a significant portion. So, thermal design, especially power loss evaluation, is crucial to the whole system. Analytical switching model based on datasheet parameters is usually adopted to evaluate devices’ switching loss due to its convenience. However, when applied on SiC metal-oxide-semiconductor field-effect-transistors ( mosfet s), turn- on waveforms of conventional analytical switching model show obvious discrepancy from experiments at both current rising and voltage falling stages. The transfer and capacitance characteristics from datasheet are responsible for that. Due to short channel effect and drain-induced barrier lowering, transfer characteristic during turn on period varies with different drain-to-source voltage v ds. C gd during actual turn on period is also different from that on the datasheet. So, considering the actual turn on process, dynamic transfer characteristic and Q gd are proposed and measured in this paper. After these modifications, switching-on waveforms of the analytical switching loss model match the experiments very well, and error of the estimated loss is less than 5%.