Abstract
Contact between two-dimensional (2D) transition metal dichalcogenides and certain metals (Au, Pd, Ti, or Pt) results in strong Fermi-level pinning and high resistance. Furthermore, to construct a high-performance device, accurate measurement of the contact resistance and Schottky barrier height (SBH) is crucial. In this study, the SBH and the resistance of a 2H phase few-layer molybdenum telluride (2H–MoTe2) film, which was grown by metal organic chemical vapor deposition, and a Ti/Au electrode were determined by analyzing the high-temperature thermal transmission properties and the transmission line method, respectively. The carrier mobility, ON/OFF ratio, SBH, and contact resistance of the few-layer MoTe2 device, which has p-type behavior with Ti/Au electrode, were found to be 53.7 cm2 V−1 s−1, 3.44 × 106, 163 meV, and 10.2 $${\text{M}}\Omega$$ , respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
