Abstract
We present a systematic study of a stress coefficient of dielectric materials (SiO2, Nb2O5, and HfO2). In particular, we show a thickness dependence of the stress coefficient on layer thickness, which shows that the determination of this coefficient is complex and requires careful analysis. We then apply the different models of the stress coefficient to multilayer structures and show that stress-induced deformation can be precisely predicted in final components with a few percent accuracy.
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