Abstract
Accumulation-layer electron mobility in n-channel depletion-mode metal oxide semiconductor field effect transistors (MOSFETs) fabricated in 4H-SiC was investigated using Hall-measurements. The accumulation-layer mobility showed a smooth transition from the bulk value (/spl sim/350 cm/sup 2//V-s) in the depletion regime into accumulation (/spl sim/200 cm/sup 2//V-s). In contrast, the field-effect mobility, extracted from the transconductance, was found to be much lower (/spl sim/27 cm/sup 2//V-s), due to the trapping of the field-induced carriers by interface states. Though the current in depletion/accumulation-mode MOSFETs can be high due to the contribution of bulk conduction resulting in low on-resistance, carrier trapping will cause the transconductance to be low in the accumulation regime.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
