Abstract
Lithium fluoride crystals were irradiated with lead ions of different energies, having the electronic energy loss of 10–20keV/nm. Accumulation of F centers with fluence was studied by absorption UV–VIS spectroscopy. It was found that the average F-center concentration is mainly determined by the average absorbed energy density with a weak decrease above 1023eV/cm3. A defect accumulation model, taking into account the recombination processes, is proposed for a seamless description of the F-center concentration fluence dependences for various projectiles and energy losses.
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