Abstract
An analytical MOSFET model is presented that accounts for energy quantization in inversion charge and depletion in the poly gate. The model consistently describes effects on charges, transcapacitances, drain current and transconductances in all regions of operation, depending on five physical device parameters and bias conditions. Compari-son to experimental data is provided and parameter extraction briefly discussed. The model offers manageable equations providing insight into the physical phenomena, thereby supporting analog circuit design practice as well as efficient circuit simulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.