Abstract
For the solution to global energy issues, highly-efficient energy conversion using next-generation power devices is required. Gallium nitride (GaN) having superior properties such as high breakdown electric field (2.8–3.75 MV/cm) is a powerful candidate for next-generation high-power semiconductor devices. [1] , [2] The selective area doping makes it possible to precisely engineer high-power devices with complex structures, allowing formation of low-resistivity region for contacting electrodes and optimization of the electric field configuration in the edge termination represented by the field limiting ring (FLR) and in the junction barrier Schottky (JBS) structures, as used in Si and SiC power devices. [3]
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