Abstract
AbstractThe present work is devoted to the experimental investigation of the far-, mid- and near-infrared photoconductivity related to the optical hole transitions involving acceptor states in GaAs/AlGaAs quantum wells. Photoconductivity spectra are studied at low lattice temperatures. It is shown that the main contribution to the far- and mid-infrared photoconductivity is associated with the optical hole transitions from the ground acceptor state to the delocalized states of the valence subbands, delocalized states above the quantum well and to the excited states of the acceptors. The relaxation times of impurity-assisted photocurrent in quantum wells were also studied. The ionization energies of the acceptor impurity obtained by various experimental methods are in a good agreement with theoretical calculations.KeywordsQuantum wellPhotoconductivityPhotoluminescenceImpurityAcceptor statesHole transitions
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