Abstract
To investigate the origin of the p-type conduction of nondoped SiGe layers, we have carried out Si+ ion implantation into strained n-SiGe layers without dislocations and studied the relationship between transport properties and point defects (or dangling bonds) introduced by ion implantation. The change in conduction from n-type to p-type was observed by introducing point defects into SiGe. In addition, after annealing ion-implanted SiGe layers to eliminate point defects, the conduction returned from p-type to n-type. Therefore, we consider that the origin of acceptor-like states in SiGe alloys is related to intrinsic point defects generated during SiGe alloy growth.
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