Acceleration of potential-induced degradation in crystalline Si photovoltaic modules after a lightning impulse strike

Abstract

The potential-induced degradation (PID) is one of the significant issues in realizing low-cost electricity from photovoltaic (PV) power generation plants. In this paper, we have investigated PID in crystalline Si (c-Si) PV modules with conventional p-type multicrystalline Si solar cells after the application of lightning impulse strikes. Lightning impulses with a voltage of −40 kV were applied to the module between the shorted electrodes of the c-Si cell and the mimic aluminum frame. It is confirmed that no degradation in the electrical characteristics of the c-Si cell occurs by applying the impulse only. We have found that the PID of c-Si PV modules was accelerated by applying the impulses between a c-Si cell and a metal frame. The acceleration of PID in the module applied with a lightning impulse might be caused by the migration of Na+ ions easily toward the c-Si cell owing to damage to the ethylene-vinyl acetate encapsulant by impulses.