Abstract
GaN films were grown on c -plane sapphire substrates by using hydride vapor phase epitaxy (HVPE) with a pulsed flow of HCl over Ga metal. NH 3 gas supply was controlled to flow in a constant rate or in a modulated way. The surface morphology dependence of these films on the various flow modulation schemes was investigated. Depending on the duty cycle of NH 3 flow, the surface morphology of GaN films was sensitively modified. This sensitive response of surface morphology of GaN films to the flow modulation was attributed to diffusion efficiency variation of Ga species under different gas environment. Under proper modulation conditions, flattened top-surface morphology of nucleated domains was found to be obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.