Abstract
Silicon carbide (SiC) metal-oxide-semiconductor–field-effect transistors (MOSFETs) are expected to be widely used for various applications, but there is a lack of long-term reliability data. Therefore, the long-term reliability should be evaluated under continuous switching conditions, as in the operation of an actual power conversion circuit. In this study, an accelerated aging test is performed under continuous switching conditions. In the accelerated aging test, the degradation of SiC MOSFETs can be accelerated at practical voltage and current ratings and switching frequencies. The accelerated aging test is performed for four types of SiC MOSFETs, including different gate structures. The results of these tests support the validity of the accelerated aging test.
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