Abstract
Accelerated aging tests were carried out under constant current conditions at an ambient temperature range of 100–150 °C for 670 nm band AlGaInP visible laser diodes. A degradation rate activation energy of 0.8 eV and an extrapolated lifetime of 106 h at 50 °C has been obtained. It is reported for the first time that lasing wavelength shifts of up to 20 nm to shorter wavelengths accompanied the threshold current increase. This is attributed to disordering of the natural superlattice in the GaInP active layer.
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