Abstract
In this paper different methods to study excitation mechanisms in ZnS thin film electroluminescence devices are presented and compared. From luminescence profiling experiments, Mn luminescence is found to be a strong function of the local electric field in the device. This reflects that Mn centers are excited by impact with hot carriers. A lack of field dependence is observed for luminescence due to electron-hole recombination via the Ag acceptor level. For the rare-earth Tb3+ luminescence it is concluded that the electroluminescence is not predominantly directly excited by impact excitation. This novel result is supported by independent experiments on field and time dependence for Tb3+ electroluminescence.
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