Abstract
The silicon solar cell with series-connected vertical junction is studied with different lamella widths—the expression of the ac recombination velocity of the excess minority carrier at the back surface is established. Spectroscopy technique reveals dominated impact of the lamella widths of the base.
Highlights
The phenomenological parameters [13], which allow this quality control, are the carrier recombination velocity: 1) in the bulk [14], defined by the diffusion length (L) and coefficient (D), lifetime (τ) of excess minority carrier
The structure of the series-connected vertical junction solar cell [39] with different lamella widths (H), is investigated in order to determine the recombination velocity of the excess minority carrier at the back surface. This new expression of the ac recombination velocity is analyzed through Bode and Nyquist diagrams, and is shown to depend strongly upon the lamella widths of the base (H)
The excess minority carrier recombination velocity at the back surface is deduced from the resolution of the following equation [45] [46]:
Summary
The phenomenological parameters [13], which allow this quality control, are the carrier recombination velocity: 1) in the bulk [14], defined by the diffusion length (L) and coefficient (D), lifetime (τ) of excess minority carrier. Silicon Solar Cell-Vertical Junction Series, Ac Recombination Velocity, Lamella Width
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