Abstract
The complex mobility of electrons in 3C - and 6H-SiC subjected to intense high frequency electric fields is calculated taking into account effects of band nonparabolicity. The electric field, given by a dc component plus an ac component in the frequency range 0.1-100 THz, is applied along the [0001] ([111]) direction in the hexagonal (cubic) polytype. The real electron mobility presents a characteristic maximum peaking around 6-8 THz, while the imaginary electron mobility is structured, with characteristic minimum and maximum around 2-3 THz and 20{30 THz, respectively. These mobilities are seen to smooth down for higher temperatures in both polytypes.
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