Abstract
The conductivity of silicon doped YIG has been measured at selected frequencies from DC to microwaves and as a function of temperature over the range 20 − 200°C. The conductivity consists of a DC term plus a frequency dependent term. The latter is interpreted as arising from the localized hopping of an electron among the four Fe 3+ cation sites surrounding a Si 4+ impurity. A numerical estimate of the conductivity due to this process agrees reasonably well with experimental data. The hopping is characterized by a temperature activated relaxation time constant; the activation energy is 0.28 ev and the time constant at 30°C is approximately 10 −9 sec.
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