Abstract
AbstractAn ultraviolet (UV) light source is continuously required for applications of sterilization as well as industrial value. In particular, research on materials and devices emitting UV‐C radiation in the range from 210 to 280 nm is very meaningful and challenging work. Herein, UV‐C electroluminescence (EL) from an all‐solution processed CaSiO3:Pr3+ (CSO) thin film is reported for the first time. The CSO thin film is formed on a Si substrate (size of 13 × 13 mm2), and structurally, the UV‐C EL device has a metal‐oxide‐semiconductor (MOS) shape consisting of CSO and interlayered SiOx of 100 and 150 nm thickness, respectively, on Si. The emission and electrical properties of the UV‐C EL device are investigated under an alternating current system. The results reveal UV‐C emission peaking at 276 nm attributed to the 4f5d‐3H(F)j transition of Pr3+ ions within CSO, with a maximum output optical power of 8.37 µW cm−2 (power efficiency of 0.15%) at an operating voltage of 40 Vop (50 Hz). The work can provide a feasible method for realizing large‐area UV‐C‐emitting devices based on the MOS structure.
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