Abstract
Extensive irradiations were carried out on n-type crystalline InSb with 2 MeV electrons at 0 degrees C. The carrier removal rate was estimated from changes in the barrier capacitance and found to be 0.8 cm-1. The introduction of a sufficient quantity of radiation damage allowed the observation of variable-range hopping which obeyed Mott's law sigma varies as exp(-b/T14/). Evidence of electron-electron interaction is presented. For heavy doses of irradiation the value of b increased considerably (b=18) and became comparable with corresponding values for amorphous InSb. The frequency dependence of the hopping conductivity was of the form sigma varies as omega s with s decreasing from s=0.6 as the number of charged defects increased.
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