Abstract
Abstract Negative Bias Temperature Instability (NBTI) is one of the major transistor aging effects, possibly leading to timing failures during run-time of a system. Thus one is interested in predicting this effect during design time. In this work an Abstraction NBTI model is introduced reducing the state space of trap-based NBTI models using two abstraction parameters, applying a state transformation to incorporate variable stress conditions. This transformation is faster than traditional approaches. Currently the conversion into estimated threshold voltage damages is a very time consuming process.
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