Abstract
GaInAsSb has important application value in the field of infrared optoelectronics. In this paper, the optical properties of Ga0.84In0.16As0.14Sb0.86 nanopillar array with different tip-wedge structures are studied by using the method of finite-difference time-domain (FDTD). The simulation results show that a single tip-wedge structure cannot achieve the enhanced absorption with absorptance of more than 90 %, while the tip-wedge combination structure can effectively improve the absorptance of the nanostructure, and the absorptance of nanostructures reaches more than 97 % when the cone to column height ratio is 0.47 and the period is 500 nm. In addition, the double-cone structure can also effectively improve the absorption characteristics of the nanostructures. When the tip-wedge nanostructures have a high duty cycle, the absorption rate of the array structure can reach 93 %, which provides a theoretical basis for the preparation of high-density optical devices and reducing the difficulty of the preparation process.
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