Abstract
Absorption of p-type GaAs crystals grown by horizontal Bridgman, liquid-encapsulated Czochralski, and liquid-phase electroepitaxy methods were measured at 4 K. The spectra of melt-grown crystals show a wide absorption band extending from 0.6 eV to the fundamental absorption edge. The comparison with the photocapacitance spectrum of EL2 defect and deep-level transient spectroscopy measurements allowed to interpret this absorption as due to transitions between the valence band and the doubly ionized EL2 level. Absorption can be bleached by intense illumination at temperatures below 60 K with the dark spectrum recovering upon heating with an activation energy of 55 meV.
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